The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness
ESD Device Modeling: Part 1 - In Compliance Magazine
Double Snapback Characteristics in High-Voltage nMOSFETs and the Impact to On-Chip ESD Protection Design
Figure 1 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | Discover Nano
Explain the snapback phenomenon in NMOS devices - Siliconvlsi
A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
parasitic BJT(기생 BJT; snapback, latch up) : 네이버 블로그
Snapback curves of a NMOS w/ a gate resistor (lines: simulation,... | Download Scientific Diagram
Snapback‐free reverse conducting IGBT with p‐poly trench‐collectors - Huang - 2020 - Electronics Letters - Wiley Online Library
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Characteristics of an Extended Drain N-Type MOS Device for Electrostatic Discharge Protection of a LCD Driver Chip Operating at
ggNMOS (grounded-gated NMOS) – SOFICS – Solutions for ICs
Impact from IC On-Chip Protection Design on EOS - In Compliance Magazine
Snapback and the ideal ESD protection solution (Electrostatic Discharge)
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Multiple current filaments and filament confinement in silicon based PIN diodes
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | Discover Nano
